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| inchange semiconductor product specification silicon npn power transistors 2SC3320 description ? with to-3pn package ? high voltage ,high speed switching ? high reliability applications ? switching regulators ? ultrasonic generators ? high frequency inverters ? general purpose power amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i b base current 5 a p c collector power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th (j-c) thermal resistance from junction to case 1.56 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3320 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 400 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =6a; i b =1.2a 1.0 v v besat base-emitter saturation voltage i c =6a ;i b =1.2a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 1.0 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe dc current gain i c =6a ; v ce =5v 10 switching times resistive load t on turn-on time 0.5 | s t s storage time 1.5 | s t f fall time i c =7.5a i b1 =1.5a i b2 =-3a r l =20 |? p w =20 | s;duty=<2% 0.15 | s inchange semiconductor product specification 3 silicon npn power transistors 2SC3320 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) inchange semiconductor product specification 4 silicon npn power transistors 2SC3320 |
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